6N60 查看數據表（PDF） - Inchange Semiconductor
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6N60 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
6N60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 3A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VSD
Forward On-Voltage
IS= 6A; VGS= 0
MIN MAX UNIT
600
V
2
4
V
1.2
Ω
±100
nA
1
μA
1.8
V
·
isc website：www.iscsemi.cn
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