74HC32BQ_15 查看數據表（PDF） - NXP Semiconductors.
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74HC32BQ_15 Datasheet PDF : 17 Pages
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NXP Semiconductors
74HC32; 74HCT32
Quad 2-input OR gate
10. Dynamic characteristics
Table 7. Dynamic characteristics
GND = 0 V; CL = 50 pF; for test circuit see Figure 7.
Symbol Parameter
Conditions
Min
74HC32
tpd
propagation delay nA, nB to nY; see Figure 6
[1]
VCC = 2.0 V
-
VCC = 4.5 V
-
VCC = 5.0 V; CL = 15 pF
-
VCC = 6.0 V
tt
transition time
see Figure 6
-
[2]
VCC = 2.0 V
-
VCC = 4.5 V
-
VCC = 6.0 V
-
CPD
power dissipation per package; VI = GND to VCC [3] -
capacitance
74HCT32
tpd
propagation delay nA, nB to nY; see Figure 6
VCC = 4.5 V
[1]
-
VCC = 5.0 V; CL = 15 pF
tt
transition time
VCC = 4.5 V; see Figure 6
CPD
power dissipation per package;
capacitance
VI = GND to VCC 1.5 V
-
[2]
-
[3]
-
[1] tpd is the same as tPHL and tPLH.
[2] tt is the same as tTHL and tTLH.
[3] CPD is used to determine the dynamic power dissipation (PD in W):
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of outputs.
25 C
Typ
22
8
6
6
19
7
6
16
11
9
7
28
40 C to +125 C Unit
Max Max
Max
(85 C) (125 C)
90
115
135 ns
18
23
27 ns
-
-
- ns
15
20
23 ns
75
95
110 ns
15
19
22 ns
13
16
19 ns
-
-
- pF
24
30
-
-
15
19
-
-
36 ns
- ns
22 ns
- pF
74HC_HCT32
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 3 December 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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