PDTA124EE 查看數據表（PDF） - Philips Electronics
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PDTA124EE Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP resistor-equipped transistor
Product specification
PDTA124EE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
VI
IO
ICM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
MAX.
−50
−50
−10
UNIT
V
V
V
−
+10
V
−
−40
V
−
−100
mA
−
−100
mA
−
150
mW
−65
+150
°C
−
150
°C
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
833
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
IC = 0; VCB = −50 V
IB = 0; VCE = −30 V
IB = 0; VCE = −30 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −5 mA; VCE = −5 V
IC = −10 mA; IB = −0.5 mA
IC = −100 µA; VCE = −5 V
IC = −5 mA; VCE = −300 mV
−
−
−
−
60
−
−
−2.5
15.4
−
−100 nA
−
−1
µA
−
−50 µA
−
−180 µA
−
−
−
−150 mV
−1100 −800 mV
−1.7 −
V
22
28.6 kΩ
RR-----21--
resistor ratio
0.8 1
1.2
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz −
−
3
pF
1998 Jul 23
3
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