PDTA124EEF 查看數據表（PDF） - Philips Electronics

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PDTA124EEF

PNP resistor-equipped transistor

Philips Electronics 

Philips Semiconductors

PNP resistor-equipped transistor

Product specification

PDTA124EEF

FEATURES

• Built-in bias resistors R1 and R2 (typical 22 kΩ each)

• Simplification of circuit design

• Reduces number of components and board space.

APPLICATIONS

• Especially suitable for space reduction in interface and

driver circuits

• Inverter circuit configuration without use of external

resistors.

DESCRIPTION

PNP resistor equipped transistor in an SC-89 (SOT490)

plastic package.

MARKING

TYPE NUMBER

PDTA124EEF

MARKING CODE

3R

PINNING

PIN

DESCRIPTION

1

base/input

2

emitter/ground (+)

3

collector/output

handbook, halfpage 3

3

R1

1

R2

1

2

2

Top view

MAM413

Fig.1 Simplified outline (SC-89; SOT490)

and symbol.

1

3

2

MGA893 - 1

Fig.2 Equivalent circuit.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

VCBO

VCEO

VEBO

VI

collector-base voltage

collector-emitter voltage

emitter-base voltage

input voltage

positive

negative

IO

ICM

Ptot

Tstg

Tj

Tamb

output current (DC)

peak collector current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

CONDITIONS

open emitter

open base

open collector

Tamb ≤ 25 °C; note 1

Note

1. Refer to SC-89 (SOT490) standard mounting conditions.

2001 Jun 11

2

MIN.

−

−

−

MAX.

−50

−50

−10

UNIT

V

V

V

−

+10

V

−

−40

V

−

−100

mA

−

−100

mA

−

250

mW

−65

+150

°C

−

150

°C

−65

+150

°C

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