PDTA124EEF 查看數據表（PDF） - Philips Electronics

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PDTA124EEF

PNP resistor-equipped transistor

Philips Electronics 

Philips Semiconductors

PNP resistor-equipped transistor

Product specification

PDTA124EEF

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Refer to SC-89 (SOT490) standard mounting conditions.

VALUE

500

UNIT

K/W

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

ICBO

ICEO

IEBO

hFE

VCEsat

Vi(off)

Vi(on)

R1

collector cut-off current

collector cut-off current

emitter cut-off current

DC current gain

collector-emitter saturation voltage

input-off voltage

input-on voltage

input resistor

IE = 0; VCB = −50 V

IB = 0; VCE = −30 V

IB = 0; VCE = −30 V; Tj = 150 °C

IC = 0; VEB = −5 V

IC = −5 mA; VCE = −5 V

IC = −10 mA; IB = −0.5 mA

IC = −100 µA; VCE = −5 V

IC = −5 mA; VCE = −0.3 V

RR-----21--

resistor ratio

Cc

collector capacitance

IE = ie = 0; VCB = −10 V;

f = 1 MHz

MIN.

−

−

−

−

60

−

−

−2.5

15.4

TYP.

−

−

−

−

−

−

−1.14

−1.7

22

MAX.

−100

−1

−50

−180

−

−150

−0.8

−

28.6

UNIT

nA

µA

µA

µA

mV

V

V

kΩ

0.8 1

1.2

−

−

3

pF

2001 Jun 11

3

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