STPS640CT 查看數據表（PDF） - STMicroelectronics
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STPS640CT Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
STPS640C
Table 1. Absolute ratings (limiting values, per diode)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward voltage
TO-220AB /TO-220FPAB
DPAK
IF(AV)
IFSM
Average forward current δ = 0.5
Surge non repetitive forward
current
TO-220AB
TO-220FPAB
DPAK
Tc = 135° C
Tc = 130° C
Tc = 120° C
tp = 10 ms Sinusoidal
IRRM
PARM
Tstg
Tj
dV/dt
Repetitive peak reverse current tp = 2 µs square F = 1 kHz
Repetitive peak avalanche power tp = 1 µs Tj = 25° C
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
Value
40
10
6
3
75
1
1300
-65 to + 150
150
10000
Unit
V
A
A
A
A
W
°C
°C
V/µs
Table 2.
Symbol
Thermal resistances
Parameter
Rth (j-c) Junction to case
Rth(c) Coupling
TO-220AB / DPAK
TO-220FPAB
TO-220AB
TO-220FPAB
Per diode
Total
Per diode
Total
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
5.5
3
5.5
5.2
0.5
3
Unit
°C/W
°C/W
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
Test Conditions
IR(1) Reverse leakage current
VF(1) Forward voltage drop
1. Pulse test: tp = 380 µs, δ < 2%
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 25° C
Tj = 125° C
Tj = 125° C
VR = VRRM
IF = 3 A
IF = 6 A
IF = 3 A
IF = 6 A
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.050 IF2(RMS)
Min. Typ. Max. Unit
100 µA
2
10 mA
0.63
0.84
V
0.5 0.57
0.67 0.72
2/9
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