HGT1N30N60A4D 查看數據表（PDF） - Fairchild Semiconductor
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HGT1N30N60A4D
Fairchild Semiconductor
HGT1N30N60A4D Datasheet PDF : 9 Pages
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HGT1N30N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
10
FREQUENCY = 1MHz
8
6
CIES
4
2
COES
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2.3
2.2
2.1
2.0
1.9
1.8
1.7
9
DUTY CYCLE < 0.5%, VGE =
PULSE DURATION = 250µs,
15V
TJ =
25oC
ICE = 60A
ICE = 30A
ICE = 15A
10
11
12
13
14
15
16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
35
DUTY CYCLE < 0.5%,
30 PULSE DURATION = 250µs
25
125oC
25oC
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
VEC, FORWARD VOLTAGE (V)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
60
125oC ta
50
IEC = 30A, VCE = 390V
40
125oC tb
30
20
10
25oC ta
25oC tb
0
200 300 400 500 600 700 800 900 1000
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
©2001 Fairchild Semiconductor Corporation
100
90 dIEC/dt = 200A/µs
80
125oC trr
70
60
125oC ta
50
40
25oC trr
30
125oC tb
20
25oC ta
10
25oC tb
0
0
5
10
15
20
25
30
IEC, FORWARD CURRENT (A)
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
1400
1200
1000
VCE = 390V
125oC, IF = 40A
800
125oC, IF = 20A
600
25oC, IF = 40A
400
200
25oC, IF = 20A
0
200
400
600
800
1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
HGT1N30N60A4D Rev. B
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