2SC1034 查看數據表（PDF） - Inchange Semiconductor
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2SC1034 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1034
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=10mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=5mA; IC=0
VCEsat Collector-emitter saturation voltage IC=750mA; IB=75m A
VBEsat Base-emitter saturation voltage
IC=750mA; IB=75m A
ICBO
Collector cut-off current
VCB=50V;IE=0
VCB=800V;IE=0
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE
DC current gain
IC=750mA ; VCE=3V
fT
Transition frequency
IE=-0.2A ; VCE=10V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
1100
V
13
V
5.0
V
1.4
V
0.2
mA
5.0
4
mA
4
40
5
MHz
95
pF
2
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