2SC3685 查看數據表（PDF） - Quanzhou Jinmei Electronic

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产品描述 (功能)

生产厂家

2SC3685

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

Product Specification

2SC3685

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0

VCEsat Collector-emitter saturation voltage IC=4A ;IB=1A

VBEsat Base-emitter saturation voltage

IC=4A ;IB=1A

ICES

Collector cut-off current

VCE=1500V; RBE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

Switching times

tstg

Storage time

tf

Fall time

IC=4A;IB1=0.8A; IB2=-1.6A

V CC=200V

MIN TYP. MAX UNIT

800

V

5

V

1.5

V

1

mA

1

mA

8

3.0

μs

0.1

0.2

μs

2

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