2N7002K(2009) 查看數據表（PDF） - PANJIT INTERNATIONAL
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2N7002K Datasheet PDF : 5 Pages
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2N7002K
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : K72
• Approx. Weight: 0.008gram
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
S ym b o l
Drain-Source Voltage
V DS
Gate-Source Voltage
V GS
Continuous Drain Current
ID
Pulsed Drain Current 1)
Maximum Power Dissipation
TA= 2 5 OC
TA= 7 5 OC
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e
Range
Junction-to Ambient Thermal Resistance(PCB mounted)2
ID M
PD
TJ,TSTG
R θJ A
Limit
60
+20
300
2000
350
210
-55 to + 150
357
Uni ts
V
V
mA
mA
mW
OC
OC /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.1-FEB.3.2009
PAGE . 1
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