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33975A_05 查看數據表(PDF) - Freescale Semiconductor

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33975A_05 Datasheet PDF : 32 Pages
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STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions of 3.0 V VDD 5.5 V, 8.0 V VPWR 28V, -40°C TC 125°C unless otherwise
noted. Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25°C.
Characteristic
Symbol
Min
Typ
Max
Unit
DIGITAL INTERFACE
Input Logic High-Voltage Thresholds (10)
Input Logic Low-Voltage Thresholds (10)
SCLK, SI, Tri-State SO Input Current
0.0 V to VDD
CS Input Current
CS = VDD
CS Pull-Up Current
CS = 0.0 V
SO High-State Output Voltage
ISO(high) = -200 µA
SO Low-State Output Voltage
ISO(high) = 1.6 mA
Input Capacitance on SCLK, SI, Tri-State SO (11)
INT Internal Pull-Up Current
INT Voltage
INT = Open Circuit
INT Voltage
IINT = 1.0 mA
WAKE Internal Pull-Up Current
WAKE Voltage
WAKE = Open Circuit
WAKE Voltage
IWAKE = 1.0 mA
WAKE Voltage (11)
Maximum Voltage Applied to WAKE Through External Pull-Up
VIH
0.7 x VDD
VDD + 0.3
V
VIL
GND - 0.3
0.2 x VDD
V
ISCLK, ISI,
µA
ISO(Tri)
-10
10
ICS
µA
-10
10
ICS
30
VSO(high)
VDD - 0.8
VSO(low)
µA
100
V
VDD
V
0.4
CIN
15
40
V INT (high)
VDD - 0.5
V INT (low)
0.2
20
pF
100
µA
V
VDD
V
0.4
I WAKE (pu)
20
40
100
µA
V WAKE (high)
V
4.0
4.3
5.3
V WAKE(low)
V
0.2
0.4
V WAKE(max)
V
40
Notes
10. Upper and lower logic threshold voltage levels apply to SI, CS, and SCLK.
11. This parameter is guaranteed by design however, is not production tested.
33975
8
Analog Integrated Circuit Device Data
Freescale Semiconductor

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