MMBT5771_14 查看數據表（PDF） - Fairchild Semiconductor

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MMBT5771_14

PNP Switching Amplifier

Fairchild Semiconductor 

March 2014

MMBT5771

PNP Switching Amplifier

Description

This device is designed for very high-speed, saturated

switching at collector currents to 100 mA. Sourced

from process 65.

Ordering Information

Part Number

MMBT5771

Marking

3R

C

E

SOT-23

B

Mark: 3R

Package

SOT-23 3L

Packing Method

Tape and Reel

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol

VCEO

VCBO

VEBO

IC

TJ , TSTG

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Junction and Storage Temperature Range

Value

-15

-15

-4.5

-200

-55 to +150

Unit

V

V

V

mA

°C

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

PD

RθJA

Total Device Dissipation

Derate Above TA = 25°C

Thermal Resistance, Junction to Ambient

Note:

3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.

Max.

225

1.8

556

Unit

mW

mW/°C

°C/W

© 1997 Fairchild Semiconductor Corporation

MMBT5771 Rev. 1.1.0

1

www.fairchildsemi.com

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