MMBT5771_14 查看數據表（PDF） - Fairchild Semiconductor
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MMBT5771_14 Datasheet PDF : 5 Pages
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Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
ICES
IEBO
hFE
VCE(sat)
VBE(sat)
Cob
Cib
hfe
ts
ton
toff
Parameter
Conditions
Collector-Emitter Breakdown
Voltage(4)
IC = -3.0 mA, IB = 0
Collector-Emitter Breakdown Voltage IC = -100 μA, VBE = 0
Collector-Base Breakdown Voltage IC = -100 μA, IE = 0
Emitter-Base Breakdown Voltage
IE = -100 μA, IC = 0
Collector Cut-Off Current
VCB = -8.0 V, IE = 0
Collector Cut-Off Current
VCE = -8.0 V, VBE = 0
VCE = -8.0 V, VBE = 0,
TA = 125°C
Emitter Cut-Off Current
VEB = -4.5 V, IC = 0
IC = -1.0 mA, VCE = -0.5 V
DC Current Gain(4)
IC = -10 mA, VCE = -0.3 V
IC = -10 mA, VCE = -0.3 V,
TA = -55°C
IC = -50 mA, VCE = -1.0 V
Collector-Emitter Saturation
Voltage(4)
IC = -1.0 mA, IB = -0.1 mA
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
Base-Emitter Saturation Voltage(4)
IC = -1.0 mA, IB = -0.1 mA
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
Output Capacitance
VCB = -5.0 V, IE = 0,
f = 140 kHz
Input Capacitance
VEB = -0.5 V, IC = 0,
f = 140 kHz
Small-Signal Current Gain
IC = -10 mA, VCE = -10 V,
f = 100 MHz
Storage Time
Turn-On Time
Turn-Off Time
IC = -10 mA, VCC = -1.5 V,
IB1 = IB2 = -1.0 mA
IC = -10 mA, VCC = -1.5 V,
IB = -1.0 mA
IC = -10 mA, VCC = -1.5 V,
IB1 = IB2 = -1.0 mA
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Min.
-15
-15
-15
-4.5
35
50
20
40
-0.75
8.5
Max.
-10
-10
-5.0
-1.0
120
Unit
V
V
V
V
nA
nA
μA
μA
-0.15
-0.18
V
-0.60
-0.80
-0.95
V
-1.50
3.0
pF
3.5
pF
20
ns
15
ns
20
ns
©1997 Fairchild Semiconductor Corporation
MMBT5771 Rev. 1.1.0
2
www.fairchildsemi.com
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