3N50 查看數據表（PDF） - Unspecified

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3N50

500V, 3A N-Channel MOSFET

Unspecified 

AOD3N50/AOU3N50

500V, 3A N-Channel MOSFET

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

BVDSS

/∆TJ

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=500V, VGS=0V

VDS=400V, TJ=125°C

IGSS

Gate-Body leakage current

VDS=0V, VGS=±30V

VGS(th) Gate Threshold Voltage

VDS=5V,ID=250µA

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=1.5A

gFS

Forward Transconductance

VDS=40V, ID=1.5A

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

ISM

Maximum Body-Diode Pulsed Current

500

600

V

0.54

V/ oC

1

µA

10

±100 nΑ

3.5 4.1 4.5

V

2.3

3

Ω

2.8

S

0.78 1

V

3

A

9

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=25V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

221 276 331 pF

25 31.4 38 pF

2.1 2.6 4.1 pF

1.9 3.9 5.9

Ω

SWITCHING PARAMETERS

Qg

Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=400V, ID=3A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

tD(off)

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=250V, ID=3A,

RG=25Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=3A,dI/dt=100A/µs,VDS=100V

Qrr

Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V

6.7 8.0 nC

1.7 3.0 nC

2.7 3.2 nC

11 13.2 ns

19 23.0 ns

20.5 24.6 ns

15 18.0 ns

134 161 ns

0.89 1.1

µC

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in

setting the upper dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C.

G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

H. L=60mH, IAS=2A, VDD=150V, RG=10Ω, Starting TJ=25°C

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