isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP4710,IIRFP4710
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤14mΩ
·Enhancement mode:
Vth =3.5 to 5.5 V (VDS=VGS, ID=250μA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Frequency DC-DC Converters
·Uninterruptible Power Supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
72
IDM
Drain Current-Single Pulsed
300
PD
Total Dissipation @TC=25℃
190
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
℃
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX
0.81
40
UNIT
℃/W
℃/W
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