2SC454 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SC454

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC454

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

30

V

30

V

5

V

100

mA

200

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to base breakdown V(BR)CBO 30

voltage

Collector to emitter breakdown V(BR)CEO 30

voltage

Emitter to base breakdown

voltage

V(BR)EBO

5

Collector cutoff current

I CBO

—

Emitter cutoff current

I EBO

—

DC current transfer ratio

hFE*1

100

Base to emitter voltage

VBE

—

Collector to emitter saturation VCE(sat)

—

voltage

Gain bandwidth product

fT

—

Collector output capacitance Cob

—

Noise figure

NF

—

Typ

—

—

—

—

—

—

0.63

—

230

—

—

IF power gain

IFG

—

35

Note: 1. The 2SC454 is grouped by hFE as follows.

B

C

D

100 to 200 160 to 320 250 to 500

Max

—

—

—

0.5

0.5

500

0.75

0.2

—

3.5

25

—

Unit

V

V

V

µA

µA

V

V

MHz

pF

dB

dB

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 18 V, IE = 0

VEB = 2 V, IC = 0

VCE = 12 V, IC = 2 mA

VCE = 12 V, IC = 2 mA

IC = 10 mA, IB = 1 mA

VCE = 12 V, IC = 2 mA

VCB = 10 V, IE = 0, f = 1 MHz

VCE = 6 V, IC = 0.1 mA,

f = 1 kHz, Rg = 500 Ω

VCE = 12 V, IC = 1 mA,

f = 455 kHz, Rg = 1.5 kΩ,

RL = 40 kΩ

2

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