BSP43 查看數據表（PDF） - Diotec Semiconductor Germany

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BSP43

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

Switching Transistors

BSP 40 ... BSP 43

Characteristics (Tj = 25/C)

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

Base saturation voltage – Basis-Sättigungsspannung 1)

IC = 150 mA, IB = 15 mA

VBEsat

–

IC = 500 mA, IB = 50 mA

VBEsat

–

DC current gain – Kollektor-Basis-Stromverhältnis 1)

–

1V

–

1.2 V

- VCE = 5 V, - IC = 100 :A

- VCE = 5 V, - IC = 100 mA

- VCE = 5 V, - IC = 500 mA

hFE

BSP 40

BSP 42

hFE

hFE

- VCE = 5 V, - IC = 100 :A

- VCE = 5 V, - IC = 100 mA

- VCE = 5 V, - IC = 500 mA

hFE

BSP 41

BSP 43

hFE

hFE

Gain-Bandwidth Product – Transitfrequenz

10

–

–

40

–

120

30

–

–

30

–

–

100

–

300

50

–

–

VCE = 5 V, IC = 10 mA, f = 100 MHz

fT

100 MHz

–

–

Thermal resistance – Wärmewiderstand

junction to ambient air – Sperrschicht zu umgebender Luft

RthA

93 K/W 2)

junction to soldering point – Sperrschicht zu Lötpad

RthS

12 K/W

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BSP 30, BSP 31, BSP 32, BSP 33

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

5

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