FCPF190N60E_F152 查看數據表（PDF） - Fairchild Semiconductor
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FCPF190N60E_F152 Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-80
*Notes:
1. VGS = 0V
2. ID = 10mA
-40
0
40 80 120 160
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
100
10μs
10
100μs
1ms
1
Operation in This Area
is Limited by R DS(on)
10ms
DC
0.1
0.01
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-80
*Notes:
1. VGS = 10V
2. ID = 10A
-40
0
40 80 120 160
TJ, Junction Temperature [oC]
Figure 10. Eoss vs. Drain to Source Voltage
Switching Capability
10
8
6
4
2
0
0 100 200 300 400 500 600
VDS, Drain to Source Voltage [V]
©2013 Fairchild Semiconductor Corporation
4
FCPF190N60E_F152 Rev. C0
www.fairchildsemi.com
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