BCW71 查看數據表（PDF） - Continental Device India Limited

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BCW71

SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited 

BCW71

BCW72

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

Collector–emitter voltage (open base)

IC = 2 mA

Emitter–base voltage (open collector)

Collector current (d.c.)

Collector current (peak value)

Total power dissipation up to Tamb = 25 °C

Storage temperature

Junction temperature

THERMAL RESISTANCE

From junction to ambient

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector cut–off current

IE = 0; VCB = 20 V

IE = 0; VCB = 20 V; Tj = 100 °C

Base emitter voltage

IC = 2 mA; VCE = 5 V

Saturation voltages

IC = 10 mA; lB = 0,5 mA

IC = 50 mA; lB = 2,5 mA

D.C. current gain

IC = 10 µA; VCE = 5 V

hFE

IC = 2 mA; VCE = 5 V

hFE

Collector capacitance at f = 1 MHz

IE = Ie = 0; VCB = 10 V

Cc

Transition frequency at f = 35 MHz

IC = 10 mA; VCE = 5 V

fT

Noise figure at RS = 2 kΩ

IC = 200 µA; VCE = 5 V

f = 1 kHz; B = 200 Hz

F

VCB0 max. 50 V

VCE0

VEB0

IC

ICM

Ptot

Tstg

Tj

max. 45 V

max. 5 V

max. 100 mA

max. 200 mA

max. 250 mW

–55 to +150 °C

max. 150 ° C

Rth j–a =

500 K/W

ICB0 <

ICB0 <

100 nA

10 µA

VBE 550 to 700 mV

typ.

VCEsat <

VBEsat typ.

VCEsat typ.

VBEsat typ.

120 mV

250 mV

750 mV

210 mV

850 mV

BCW71

typ. 90

>

110

<

220

BCW72

150

200

450

typ.

2,5

pF

typ.

300

MHz

<

10

dB

Continental Device India Limited

Data Sheet

Page 2 of 4

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