FDB20N50F 查看數據表（PDF） - Fairchild Semiconductor
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FDB20N50F Datasheet PDF : 8 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
Figure 8. Maximum Safe Operating Area
200
100
10
Operation in This Area
1 is Limited by R DS(on)
10 μs
100 μs
1 ms
10 ms
100 ms
DC
0.9
0.8
-100
*Notes:
1. VGS = 0V
2. ID = 1mA
-50
0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Drain Current
vs. Case Temperature
25
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10
100
800
VDS, Drain-Source Voltage [V]
Figure 10. Unclemped Inductive
Switching Capability
100
20
15
TJ = 25 oC
10
10
5
0
25
50
75
100
125
150
TC, Case Temperature [oC]
1
0.001 0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
Figure 11. Transient Thermal Response Curve
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01 0.01
single pulse
0.002
10-5
10-4
PDM
PDM
t1
t2
t1
t2
*Notes:
1. ZθJC(t) = 0.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
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©2012 Fairchild Semiconductor Corporation
4
FDB20N50F Rev. C3
www.fairchildsemi.com
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