FDPF52N20T 查看數據表（PDF） - Fairchild Semiconductor
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FDPF52N20T Datasheet PDF : 10 Pages
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Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP52N20
Device
FDP52N20
Package
TO-220
Reel Size
-
Tape Width
-
FDPF52N20T
FDPF52N20T
TO-220F
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
Test Conditions
Min.
ID = 250µA, VGS = 0V, TJ = 25oC
200
ID = 250µA, Referenced to 25oC
-
VDS = 200V, VGS = 0V
-
VDS = 160V, TC = 125oC
-
VGS = ±30V, VDS = 0V
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 26A
VDS = 40V, ID = 26A
3.0
-
(Note 4)
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 160V, ID = 52A
VGS = 10V
-
-
-
-
-
(Note 4, 5)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 100V, ID = 20A
RG = 25Ω
-
-
-
(Note 4, 5)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 52A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 52A
dIF/dt = 100A/µs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.4mH, IAS = 52A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 52A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
-
(Note 4)
-
Typ. Max. Units
-
-
V
0.2
-
V/oC
-
1
µA
-
10
-
±100 nA
-
5.0
V
0.041 0.049 Ω
35
-
S
2230 2900 pF
540
700
pF
66
100 pF
49
63
nC
19
-
nC
24
-
nC
53
115
ns
175
359
ns
48
107
ns
29
68
ns
-
52
A
-
204
A
-
1.5
V
162
-
ns
1.3
-
µC
FDP52N20 / FDPF52N20T Rev. A
2
www.fairchildsemi.com
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