FDPF52N20T 查看數據表（PDF） - Fairchild Semiconductor
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FDPF52N20T Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
102 Top :
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101 Bottom: 5.5 V
100
10-1
10-1
* Notes :
1. 250µs Pulse Test
2.
T
C
=
25°C
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.12
0.10
0.08
VGS = 10V
0.06
0.04
0.02
0.00
0
VGS = 20V
* Note : TJ = 25°C
25
50
75
100
125
150
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
6000
5000
C =C +C (C =shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
4000
C
oss
C
3000
iss
2000
C
1000
rss
* Note ;
1. V =0V
GS
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage[V]
DS
Figure 2. Transfer Characteristics
102
150°C
101
25°C
-55°C
* Notes :
1. VDS = 40V
2. 250µs Pulse Test
100
2
4
6
8
10
12
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
102
101
150℃
25℃
* Notes :
1. VGS = 0V
2. 250µs Pulse Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
VDS = 40V
VDS = 100V
8
V = 160V
DS
6
4
2
* Note : ID = 52A
0
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
FDP52N20 / FDPF52N20T Rev. A
3
www.fairchildsemi.com
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