DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

FDP5N50NZ 查看數據表(PDF) - Fairchild Semiconductor

零件编号
产品描述 (功能)
生产厂家
FDP5N50NZ
Fairchild
Fairchild Semiconductor Fairchild
FDP5N50NZ Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
FDP5N50NZ / FDPF5N50NZ
N-Channel UniFETTM II MOSFET
500 V, 4.5 A, 1.5
Features
• R DS(on) = 1.38 (Typ.) @ VGS = 10 V, ID = 2.25 A
• Low Gate Charge (Typ. 9 nC)
Low Crss (Typ. 4 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
April 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest on-
state resistance among the planar MOSFET, and also provides
superior switching performance and higher avalanche energy
strength. In addition, internal gate-source ESD diode allows
UniFET II MOSFET to withstand over 2kV HBM surge stress.
This device family is suitable for switching power converter
applications such as power factor correction (PFC), flat panel
display (FPD) TV power, ATX and electronic lamp ballasts.
D
GD
S
TO-220
GD
S
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient, Max.
G
S
FDP5N50NZ FDPF5N50NZ
500
±25
4.5
4.5*
2.7
2.7*
(Note 1)
18
18*
(Note 2)
160
(Note 1)
4.5
(Note 1)
7.8
(Note 3)
10
78
30
0.62
0.24
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDP5N50NZ
1.6
-
62.5
FDPF5N50NZ
4.1
-
62.5
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
1
FDP5N50NZ / FDPF5N50NZ Rev. C0
www.fairchildsemi.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]