FGPF4533 查看數據表（PDF） - Fairchild Semiconductor
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FGPF4533 Datasheet PDF : 8 Pages
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FGPF4533
330 V PDP Trench IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE (sat) = 1.55 V @ IC = 50 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• PDP TV, Consumer appliances, Lighting
April 2013
General Description
Using novel trench IGBT technology, Fairchild®’s new series of
trench IGBTs offer the optimum performance for consumer
appliances, PDP TV and lighting applications where low con-
duction and switching losses are essential.
GC E
TO-220F
(Retractable)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC pulse(1)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RJC(IGBT)
RJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5sec
* Ic_pluse limited by max Tj
Ratings
330
30
200
28.4
11.4
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
4.4
62.5
Unit
V
V
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
1
FGPF4533 Rev. C0
www.fairchildsemi.com
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