2SC4304 查看數據表（PDF） - Inchange Semiconductor
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2SC4304 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4304
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
800
V
VCEsat Collector-emitter saturation voltage IC=0.7A ;IB=0.14A
0.5
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=0.7A ;IB=0.14A
VCB=800V; IE=0
VEB=7V; IC=0
1.2
V
100
μA
100
μA
hFE
DC current gain
IC=0.7A ; VCE=4V
10
30
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
50
pF
fT
Transition frequency
固IN电C半H导AN体GE SEMICONDUCTOR Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IE=-0.3A ; VCE=12V
IC=0.7A; IB1=0.1A
IB2=-0.35A
VCC=250V ,RL=357Ω
15
0.7
4.0
0.7
MHz
μs
μs
μs
2
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