2SA1585SR 查看數據表（PDF） - ROHM Semiconductor

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2SA1585SR

Low VCE(sat) Transistor (−20V, −3A)

ROHM Semiconductor 

Transistors

2SB1424 / 2SA1585S

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Collector-base breakdown voltage BVCBO −20

Collector-emitter breakdown voltage BVCEO −20

Emitter-base breakdown voltage

BVEBO −6

Collector cutoff current

ICBO

−

Emitter cutoff current

IEBO

−

Collector-emitter saturation voltage VCE(sat) −

DC current transfer ratio

hFE

120

Transition frequency

fT

−

Output capacitance

Cob

−

Typ.

−

−

−

−

−

−

−

240

35

Max.

−

−

−

−0.1

−0.1

−0.5

390

−

−

Unit

V

V

V

µA

µA

V

−

MHz

pF

Conditions

IC= −50µA

IC= −1mA

IE= −50µA

VCB= −20V

VEB= −5V

IC/IB= −2A/ −0.1A

VCE= −2V, IC= −0.1A

VCE= −2V, IE=0.5A, f=100MHz

VCB= −10V, IE=0A, f=1MHz

zPackaging specifications and hFE

Package

Taping

Code

Type

Basic ordering

hFE unit (pieces)

2SA1585S QR

TP

5000

T100

1000

−

2SB1424 QR

−

hFE values are classified as follows :

Item

hFE

Q

R

120 to 270 180 to 390

zElectrical characteristic curves

−10

VCE= −2V

−5

−2

−1

−0.5

−0.2

−0.1

−0.05

Ta=100°C

25°C

−40°C

−0.02

−0.01

−5m

−2m

−1m

0

−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4

BASE TO EMITTER VOLTAGE : VBE (V)

−2.0

−20mA

−18mA

−1.6

−1.2

−0.8

−0.4

Ta=25°C

−16mA −14mA

−12mA

−10mA

−8mA

−6mA

−4mA

−2mA

0

IB=0A

0

−0.2 −0.4 −0.6 −0.8 −1.0

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter propagation

characteristics

Fig.2 Grounded emitter output

characteristics ( )

−5

Ta=25°C

−50mA −45mA

−4

−40mA −35mA

−30mA

−3

−25mA

−20mA

−15mA

−2

−10mA

−1

−5mA

0

IB=0A

0

−1

−2

−3

−4

−5

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.3 Grounded emitter output

characteristics ( )

Rev.A

2/3

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