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2SA1700L-D-TN3-T(2012) 查看數據表(PDF) - Unisonic Technologies

零件编号
产品描述 (功能)
生产厂家
2SA1700L-D-TN3-T
(Rev.:2012)
UTC
Unisonic Technologies UTC
2SA1700L-D-TN3-T Datasheet PDF : 3 Pages
1 2 3
2SA1700
PNP EPITAXIAL SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING ( TA=25)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-200
mA
Collector Current (PULSE)
ICP
-400
mA
Power Dissipation
Junction Temperature
Storage Temperature
1
W
PD
10 (TC=25)
W
TJ
150
TSTG
-55 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TA=25, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Reverse Transfer Capacitance
Gain-Bandwidth Product
Turn-on Time
Turn-off Time
SYMBOL
TEST CONDITIONS
BVCBO IC= -10μA, IE=0
BVCEO IC= -1mA, IB=0, RBE=
BVEBO IE= -10μA, IC=0
ICBO VCB= -300V, IE=0
IEBO VEB= -4V, IC=0
hFE VCE= -10V, IC= -50mA
VCE(SAT) IC= -50mA, IB= -5mA
VBE(SAT) IC= -50mA, IB= -5mA
COB VCB= -30V, f=1MHz
CRE VCB= -30V, f=1MHz
fT VCE= -30V, IC= -10mA
tON See test circuit
tOFF See test circuit
MIN TYP MAX UNIT
-400
V
-400
V
-5
V
-0.1 μA
-0.1 μA
60
200
-0.8
V
-1.0
V
5
pF
4
pF
70
MHz
0.25
μs
5
μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R213-011.B

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