A1700 查看數據表（PDF） - Galaxy Semi-Conductor

零件编号

产品描述 (功能)

生产厂家

A1700

PNP Epitaxial Planar Silicon Transistor

Galaxy Semi-Conductor 

PNP Epitaxial Planar Silicon Transistor

Production specification

2SA1700

ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX

UNIT

Collector-base breakdown voltage VCBO

Collector-emitter breakdown voltage VCEO

Emitter-base breakdown voltage

VEBO

Collector cut-off current

ICBO

Emitter cut-off current

IEBO

DC current gain

hFE

Collector-emitter saturation voltage VCE(sat)

IC=-10uA,IE=0

IC=-1mA,IB=0

IE=-10uA,IC=0

VCB=-300V,IE=0

VEBO=-4V,IC=0

VCE=-10V,IC=-50mA

IC=-50mA,IB=-5mA

-400

-400

-5

60

V

V

-100 nA

-100 nA

200

-0.8 V

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Reverse transfer capacitance

Turn-ON Time

Turn-OFF Time

VBE(sat)

fT

Cob

Cre

ton

toff

IC=-50mA,IB=-5mA

VCE=-30V,IC=-10mA

VCB=-30V,f=1MHz

VCB=-30V,f=1MHz

-1.0

70

5

4

0.25

5

V

MHz

pF

pF

μs

μs

CLASSIFICATION OF hFE(1)

Rank

Range

D

60-120

E

100-200

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

V/(W)005

Rev.A

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