MJD117 查看數據表（PDF） - Fairchild Semiconductor
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MJD117 Datasheet PDF : 5 Pages
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MJD117
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP117
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
- 100
V
- 100
V
-5
V
-2
A
-4
A
- 50
mA
20
W
1.75
W
150
°C
- 65 ~ 150
°C
Equivalent Circuit
C
B
R1
R1 ≅ 10kΩ
R2 ≅ 0.6kΩ
R2
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO (sus)
ICEO
ICBO
IEBO
hFE
*Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
fT
Cob
*Base-Emitter Saturation Voltage
*Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
* Pulse Test: PW≤300µs, Duty Cycle≤2%
IC = - 30mA, IB = 0
VCE = - 50V, IB = 0
VCB = - 100V, IE = 0
VEB = - 5V, IC = 0
VCE = - 3V, VEB = - 0.5A
VCE = - 3V, VEB = - 2A
VCE = - 3V, IC = - 4A
IC = -2A, IB = - 8mA
IC = - 4A, IB = - 40mA
IC = - 4A, IB = - 40mA
VCE = - 3A, IC = - 2A
VCE = -10V, IC = - 0.75A
VCB = - 10V, IE = 0
f= 0.1MHz
Min.
- 100
500
1000
200
25
Max.
- 20
- 20
-2
12K
-2
-3
-4
- 2.8
200
Units
V
µA
µA
mA
V
V
V
V
MHz
pF
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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