2SK3019 查看數據表（PDF） - KEXIN Industrial
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2SK3019 Datasheet PDF : 3 Pages
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SMD Type
N-Channel MOSFET
2SK3019
■ Features
● Low on-resistance.
● Fast switching speed.
● Low voltage drive (2.5V) makes this
device ideal for portable equipment.
● Easily designed drive circuits.
● Easy to parallel.
Gate
Drain
Gate
Protection
Diode
Source
MOSFET
1 Gate
2 Source
3 Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
±20
Continuous Drain Current
ID
Continuous Drain Current Pulsed *1
IDP
±100
mA
±400
Power Dissipation
*2
PD
150
mW
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
*1 Pw≤10μs, Duty cycle≤1%
*2 With each pin mounted on the recommended lands.
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
Test Conditions
Min Typ Max Unit
VDSS ID=100μA, VGS=0V
30
V
IDSS
VDS=30V, VGS=0V
1 uA
IGSS
VDS=0V, VGS=±20V
±1 uA
VGS(th) VDS=VGS , ID=100μA
0.8
1.5 V
RDS(On)
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
5
8
Ω
7 13
| Yfs | VDS=3V, ID=10mA
20
mS
Ciss
13
Coss
VGS=0V, VDS=5V, f=1MHz
9
pF
Crss
4
td(on)
15
VGS=5V, VDS=5V, RL=500Ω,RGEN=10Ω
tr
35
ns
td(off)
80
ID=10mA
tf
80
■ Marking
Marking
KN
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