NDT3055 查看數據表（PDF） - Fairchild Semiconductor

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NDT3055

N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

May 1998

NDT3055

N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high

density process is especially tailored to minimize

on-state resistance and provide superior switching

performance. These devices are particularly suited for

low voltage applications such as DC motor control and

DC/DC conversion where fast switching, low in-line

power loss, and resistance to transients are needed.

Features

4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V.

High density cell design for extremely low RDS(ON).

High power and current handling capability in a widely used

surface mount package.

SuperSOTTM-3

SuperSOTTM-6

SuperSOTTM-8

SO-8

SOT-223

SOIC-16

D

D

D

D

S

S

D

G

SOT-223

G

D

S

G

SOT-223*

G

(J23Z)

Absolute Maximum Ratings TA = 25oC unless otherwise noted

Symbol Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage - Continuous

ID

Maximum Drain Current - Continuous (Note 1a)

- Pulsed

PD

Maximum Power Dissipation

(Note 1a)

(Note 1b)

(Note 1c)

TJ,TSTG Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

* Order option J23Z for cropped center drain lead.

(Note 1a)

(Note 1)

NDT3055

60

±20

4

25

3

1.3

1.1

-65 to 150

42

12

© 1998 Fairchild Semiconductor Corporation

S

Units

V

V

A

W

°C

°C/W

°C/W

NDT3055 Rev.B

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