NDT3055 查看數據表（PDF） - Fairchild Semiconductor
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NDT3055 Datasheet PDF : 8 Pages
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Typical Electrical Characteristics (continued)
15
I D = 4A
12
9
VDS = 10V
20V
40V
6
3
0
0
3
6
9
12
15
Qg , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
50
10
3
1
0.3
0.1
0.03
0.01
0.1
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RθJA= 110o C/W
TA = 25°C
1m10s0us
10ms
D1C10ss100ms
0.2
0.5 1
2
5 10
30
VDS , DRAIN-SOURCE VOLTAGE (V)
60 100
1000
500
C iss
200
C oss
100
50
f = 1 MHz
20
VGS = 0V
C rss
10
0.1
0.3
1
4
10
30 60
V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
80
SINGLE PULSE
60
RθJA =110°C/W
TA= 25°C
40
20
0
0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5 D = 0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.01
0.005
0.002
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
R θJA (t) = r(t) * RθJA
RθJA = 110 °C/W
P(pk)
t1 t 2
TJ - TA = P * R θJA (t)
Duty Cycle, D = t1 / t 2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
NDT3055 Rev.B
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