2SD2184 查看數據表（PDF） - Panasonic Corporation
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2SD2184 Datasheet PDF : 3 Pages
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Transistors
2SD2184
Silicon NPN epitaxial planar type
For low-frequency output amplification
Unit: mm
■ Features
6.9±0.1
0.7 4.0
2.5±0.1
(0.8)
• High collector-emitter voltage (Base open) VCEO
• Low collector-emitter saturation voltage VCE(sat)
0.65 max.
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage (Emitter open) VCBO
150
V
e Collector-emitter voltage (Base open) VCEO
150
V
c type) Emitter-base voltage (Collector open) VEBO
5
V
n d ge. ed Collector current
IC
1
A
sta tinu Peak collector current
a e cycle iscon Collector power dissipation *
ICP
1.5
A
PC
1
W
life d, d Junction temperature
Tj
150
°C
n u duct type Storage temperature
Tstg −55 to +150 °C
te tin Pro ued Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
four ntin board thickness of 1.7 mm for the collector portion
0.45+–00..0150
2.5±0.5
1.05±0.05
2.5±0.5
0.45+–00..0150
123
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
in n s followliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min
c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
150
tinue anc Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
150
M is con inten Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
/Dis ma Collector-base cutoff current (Emitter open) ICBO VCB = 75 V, IE = 0
D ance type, Forward current transfer ratio
hFE1 *2 VCE = 2 V, IC = 100 mA
120
ten ce hFE2 *1 VCE = 2 V, IC = 500 mA
40
Main tenan Collector-emitter saturation voltage *1 VCE(sat) IC = 500 mA, IB = 25 mA
ain Base-emitter saturation voltage *1
VBE(sat) IC = 500 mA, IB = 25 mA
ed m Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
(plan Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
Typ Max
0.1
340
0.11 0.30
0.8 1.2
90
12 20
Unit
V
V
V
µA
V
V
MHz
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
120 to 240 170 to 340
Publication date: April 2003
SJC00245CED
1
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