CS4N60FA9R 查看數據表（PDF） - Unspecified
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CS4N60FA9R Datasheet PDF : 10 Pages
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CS4N60F A9R
○R
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25℃
VDS =600V, VGS= 0V,
Ta = 25℃
VDS =480V, VGS= 0V,
Ta = 125℃
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp≤300µs,δ≤2%
Test Conditions
VGS=10V,ID=2A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs
Forward Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Test Conditions
VDS=15V, ID =2A
VGS = 0V VDS = 25V
f = 1.0MHz
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Test Conditions
ID =4A VDD = 300V
RG =10Ω
ID =4A VDD =480V
VGS = 10V
Rating
Unit
Min. Typ. Max. s
600 -- --
V
-- 0.67 -- V/℃
-- --
1
µA
-- -- 100 µA
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 2.1 2.5
2.0 -- 4.0
Units
Ω
V
Rating
Min. Typ. Max.
-- 3.5 --
-- 590 --
-- 55 --
-- 4 --
Units
S
pF
Rating
Min. Typ. Max.
-- 14 --
-- 15 --
-- 34 --
-- 13 --
-- 14.5 --
-- 2.6 --
-- 6.5 --
Units
ns
nC
WUXI CHI NA RESOU RCES HUAJ I NG MI CROELECTR ONI CS CO. , LTD. Pag e 2 of 1 0
2015V01
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