ZDT6718 查看數據表（PDF） - Diodes Incorporated.

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ZDT6718

SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS

Diodes Incorporated. 

ZDT6718

NPN TRANSISTOR

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL MIN. TYP. MAX.

UNIT

CONDITIONS.

Collector-Base

V(BR)CBO 20

100

Breakdown Voltage

V

IC=100µA

Collector-Emitter

V(BR)CEO 20

27

Breakdown Voltage

V

IC=10mA*

Emitter-Base

V(BR)EBO

5

8.3

Breakdown Voltage

V

IE=100µA

Collector Cutoff

ICBO

Current

100 nA

VCB=16V

Emitter Cutoff Current IEBO

Collector Emitter

ICES

Cutoff Current

100 nA

100 nA

VEB=4V

VCES=16V

Collector-Emitter

Saturation Voltage

VCE(sat)

Base-Emitter

Saturation Voltage

VBE(sat)

7

15 mV IC=0.1A, IB=10mA*

70 150 mV IC=1A, IB=10mA*

130 200 mV IC=2.5A, IB=50mA*

0.89 1.0 V

IC=2.5A, IB=50mA*

Base-Emitter Turn-On VBE(on)

Voltage

0.79 1.0 V

IC=2.5A, VCE=2V*

Static Forward

hFE

Current Transfer

Ratio

Transition

fT

Frequency

200 400

300 450

200 360

100 180

100 140

MHz

IC=10mA, VCE=2V*

IC=200mA, VCE=2V*

IC=2A, VCE=2V*

IC=6A, VCE=2V*

IC=50mA, VCE=10V

f=100MHz

Output Capacitance Cobo

23

30

pF

VCB=10V, f=1MHz

Turn-On Time

ton

170

Turn-Off Time

toff

400

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical characteristics graphs see SuperSOT FMMT618 datasheet.

VCC=10V, IC=1A

IB1=-IB2=10mA

3 - 373

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