ZDT6718 查看數據表（PDF） - Diodes Incorporated.

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ZDT6718

SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS

Diodes Incorporated. 

ZDT6718

PNP TRANSISTOR

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

V(BR)CBO

Breakdown Voltage

-20 -65

V

IC=-100µA

Collector-Emitter

V(BR)CEO

Breakdown Voltage

-20 -55

V

IC=-10mA*

Emitter-Base

V(BR)EBO

Breakdown Voltage

-5

-8.8

V

IE=-100µA

Collector Cutoff

ICBO

Current

-100 nA VCB=-15V

Emitter Cutoff

IEBO

Current

-100 nA VEB=-4V

Collector Emitter

ICES

Cutoff Current

-100 nA VCES=-15V

Collector-Emitter

VCE(SAT)

Saturation Voltage

Base-Emitter

VBE(SAT)

Saturation Voltage

-16 -40 mV

-130 -200 mV

-145 -220 mV

-0.87 -1.0 V

IC=-0.1A, IB=-10mA*

IC=-1A, IB=-20mA*

IC=-1.5A, IB=-50mA*

IC=-1.5A, IB=-50mA*

Base-Emitter

Turn-On Voltage

VBE(ON)

-0.81 -1.0 V

IC=-2A, VCE=-2V*

Static Forward

hFE

Current Transfer

Ratio

Transition

fT

Frequency

300 475

300 450

150 230

50 70

15 30

150 180

MHz

IC=-10mA, VCE=-2V*

IC=-100mA, VCE=-2V*

IC=-2A, VCE=-2V*

IC=-4A, VCE=-2V*

IC=-6A, VCE=-2V*

IC=-50mA, VCE=-10V

f=100MHz

Output Capacitance Cobo

21 30 pF

Turn-On Time

ton

40

Turn-Off Time

toff

670

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical characteristics graphs see SuperSOT FMMT718 datasheet.

VCB=-10V, f=1MHz

VCC=-10V, IC=-1A

IB1=IB2=20mA

3 - 374

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