BF620 查看數據表（PDF） - STMicroelectronics
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BF620 Datasheet PDF : 4 Pages
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BF620
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
• Device mounted on a PCB area of 1 cm2
Max
100
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 200 V
VCB = 200 V
VCB = 300 V
Tj = 150 oC
IEBO
Emitter Cut-off Current
(IC = 0)
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 10 mA
IE = 100 µA
IC = 30 mA
IB = 5 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 30 mA
IB = 5 mA
hFE∗ DC Current Gain
IC = 25 mA
VCE = 20 V
fT
Transition Frequency IC = 15 mA VCE = 10 V f =100 MHz
CRE Reverse Capacitance IC = 0
VCE = 30 V f = 1MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Min.
300
5
50
60
Typ.
Max.
10
10
100
50
0.6
1.2
1.6
Unit
nA
µA
µA
nA
V
V
V
V
MHz
pF
2/4
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