2SD1277 查看數據表（PDF） - Panasonic Corporation
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2SD1277 Datasheet PDF : 2 Pages
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Power Transistors
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
IC/IB=500
10
TC=100˚C
3
25˚C
–25˚C
1
0.3
0.1
0.03
0.01
0.1 0.3
1
3
10 30
Collector current IC (A)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
ICP
10
t=10ms
IC
1ms
3
DC
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
IC — VCE
12
TC=25˚C
10
8
IB=4.0mA
3.5mA
3.0mA
6
2.5mA
2.0mA
1.5mA
4
1.0mA
0.5mA
2
0
0
1
2
3
4
5
Collector to emitter voltage VCE (V)
2SD1277, 2SD1277A
VCE(sat) — IC
(1) IC/IB=250
10
(2) IC/IB=500
(3) IC/IB=1000
TC=25˚C
3
(3)
(2)
(1)
1
0.3
0.1
0.03
0.01
0.1 0.3
1
3
10 30
Collector current IC (A)
VCB(sat) — IC
IC/IB=500
10
3
TC=–25˚C
25˚C
1
100˚C
0.3
0.1
0.03
0.01
0.1 0.3
1
3
10 30
Collector current IC (A)
100000
30000
10000
3000
1000
hFE — IC
TC=100˚C
25˚C
–25˚C
VCE=3V
300
100
30
10
0.1 0.3 1 3 10 30 100
Collector current IC (A)
Rth(t) — t
103
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
2
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