2SD1277A 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SD1277A Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1277 2SD1277A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter
breakdown voltage
2SD1277
2SD1277A
VCEsat Collector-emitter saturation voltage
VBEsat Base-emitter saturation voltage
2SD1277
ICBO
Collector cut-off current
2SD1277A
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
fT
Transition frequency
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
CONDITIONS
IC=30mA , IB=0
IC=4A IB=8mA
IC=4A IB=8mA
VCB=60V IE=0
VCB=80V IE=0
VEB=7V; IC=0
IC=8A ; VCE=3V
IC=4A ; VCE=3V
IC=0.5A;
VCE=10V;f=1MHz
IC=4A ;IB1=8mA
IB2=-8mA;VCC=50V
hFE-2 Classifications
Q
R
2000-5000 4000-10000
MIN
60
80
500
2000
20
TYP.
MAX
1.5
2
0.1
0.1
2
UNIT
V
V
V
V
Ma
mA
mA
10000
MHz
0.5
Μs
4
Μs
1
μs
JMnic
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