MJ11012 查看數據表（PDF） - Inchange Semiconductor
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MJ11012 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJ11012
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= 20A
·Low Collector Saturation Voltage-
: VCE (sat)= 3.0V(Max.)@ IC= 20A
·Complement to Type MJ11011
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continunous
30
A
ICM
Collector Current-Peak
50
A
IB
Base Current-Continunous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
1
A
200
W
200
℃
-55~+200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.87 ℃/W
isc Website：www.iscsemi.cn
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