2SA1015 查看數據表（PDF） - Inchange Semiconductor
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2SA1015 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Transistor
isc Product Specification
2SA1015
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -100mA ; IB= -10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -100mA ; IB= -10mA
ICBO
Emitter Cutoff Current
VCB= -50V; IE= 0
IEBO
Collector Cutoff Current
VEB= -5V; IC= 0
hFE(1)
DC Current Gain
IC= -2mA ; VCE= -6V
hFE(2)
DC Current Gain
IC= -150mA ; VCE= -6V
fT
Current-Gain—Bandwidth Product
IC= -1mA; VCE= -10V;
Cob
Collector Output Capacitance
NF
Noise Figure
VCB=-10V; IE=0; f=1MHz
VCE=-6V,IC=-0.1mA;f=1KHz,
RG=10KΩ
hFE(1) Classifications
O
Y
GR
70-140 120-240 200-400
MIN TYP. MAX UNIT
-0.3 V
-1.1 V
-0.1 μA
-0.1 μA
70
400
25
80
MHz
7
pF
10 dB
isc website： www.iscsemi.com
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