STD3NB50 查看數據表（PDF） - STMicroelectronics
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STD3NB50 Datasheet PDF : 6 Pages
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STD3NB50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.5
Rthj-amb Thermal Resistance Junction-ambient
Max
100
Rthc-sink Thermal Resistance Case-sink
Typ
1.5
Tl
Maximum Lead Temperature For Soldering Purpose
275
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
3
40
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
500
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID =1.9 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
2.5 2.8
Ω
3.8
A
DYNAMIC
Symbol
gfs (∗)
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1.9 A
Min.
2
Typ.
2.3
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
400 520 pF
62
84
pF
7.5
10
pF
2/6
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