MJ11033 查看數據表（PDF） - New Jersey Semiconductor
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MJ11033 Datasheet PDF : 2 Pages
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MJ11028, MJ11030, MJ11032(NPN)
PNP
MJ11029
MJ11033
BASE
COLLECTOR
o
NPN
MJ11028
MJ11030
MJ11032
BASE
3.0k =25
I
o
EMITTER
Figure 1. Darlington Circuit Schematic
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1)
(lc = 1 00 mAdc, IB = 0)
MJ11028, MJ11029
MJ11030
MJ11032, MJ11033
Collector-Emitter Leakage Current
(VCE = 60 Vdc, RBE = 1 kQ)
(VCE = 90 Vdc, RBE = 1 kQ)
(VCE = 120 Vdc, RBE = 1 kQ)
(VCE = 60 Vdc, RBE = 1 kQ, Tc = 150°C)
(VCE = 120 Vdc, RBE = 1 kQ, Tc = 150°C)
M J 11 028, MJ 1 1 029
MJ11030
MJ11032, MJ11033
MJ11028, MJ11029
MJ11032, MJ11033
Emitter Cutoff Current
(VBE = 5 Vdc, lc = 0)
Collector-Emitter Leakage Current
(VCE = 50 Vdc, IB = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(lc = 25 Adc, VCE = 5 Vdc)
(lc = 50 Adc, VCE = 5 Vdc)
Collector-Emitter Saturation Voltage
(lc = 25 Adc, IB = 250 mAdc)
(lc = 50 Adc, IB = 500 mAdc)
Base-Emitter Saturation Voltage
(lc = 25 Adc, IB = 200 mAdc)
(lc = 50 Adc, IB = 300 mAdc)
1. Pulse Test: Pulse Width < 300ns, Duty Cycle < 2.0%.
Symbol
V(BR)CEO
!CER
IEBO
ICEO
hFE
VcE(sat)
VBE(sat)
Min
Max
Unit
60
~
Vdc
90
120
mAdc
2
2
2
-
10
10
mAdc
-
5
mAdc
-
2
~
1k
18k
400
Vdc
:
2.5
3.5
Vdc
3.0
_
4.5
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