J111 查看數據表（PDF） - Vishay Semiconductors

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J111

N-Channel JFETs

Vishay Semiconductors 

J/SST111 Series

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

J/SST111

Limits

J/SST112

J/SST113

Parameter

Symbol

Test Conditions

Typa Min Max Min Max Min Max Unit

Static

Gate-Source

Breakdown Voltage

Gate-Source Cutoff Voltage

Saturation Drain Currentb

Gate Reverse Current

Gate Operating Current

Drain Cutoff Current

Drain-Source On-Resistance

Gate-Source Forward Voltage

Dynamic

V(BR)GSS

VGS(off)

IDSS

IGSS

IG

ID(off)

rDS(on)

VGS(F)

IG = –1 mA , VDS = 0 V

VDS = 5 V, ID = 1 mA

VDS = 15 V, VGS = 0 V

VGS = –15 V, VDS = 0 V

TA = 125_C

VDG = 15 V, ID = 10 mA

VDS = 5 V, VGS = –10 V

TA = 125_C

VGS = 0 V, VDS = 0.1 V

IG = 1 mA , VDS = 0 V

–55

–35

–35

–35

V

–3 –10 –1

–5

–3

20

5

2

mA

–0.005

–1

–1

–1

nA

–3

–5

pA

0.005

1

1

1

nA

3

30

50

100 W

0.7

V

Common-Source Forward

Transconductance

Common-Source

Output Conductance

gfs

6

VDS = 20 V, ID = 1 mA

f = 1 kHz

gos

25

Drain-Source On-Resistance

rds(on)

VGS = 0 V, ID = 0 mA

f = 1 kHz

Common-Source

Input Capacitance

Ciss

7

VDS = 0 V, VGS = -10 V

Common-Source Reverse Transfer

Capacitance

Crss

f = 1 MHz

3

Equivalent Input

Noise Voltage

en

VDG = 10 V, ID = 1 mA

f = 1 kHz

3

mS

mS

30

50

100 W

12

12

12

pF

5

5

5

nV⁄

√Hz

Switching

td(on)

2

Turn-On Time

tr

VDD = 10 V, VGS(H) = 0 V

2

td(off)

See Switching Circuit

6

ns

Turn-Off Time

tf

15

Notes

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

b. Pulse test: PW v300 ms duty cycle v3%.

NCB

www.vishay.com

7-2

Document Number: 70232

S-04028—Rev. E, 04-Jun-01

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