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31DQ05 查看數據表(PDF) - Vishay Semiconductors

零件编号
产品描述 (功能)
生产厂家
31DQ05
Vishay
Vishay Semiconductors Vishay
31DQ05 Datasheet PDF : 5 Pages
1 2 3 4 5
31DQ05, 31DQ06
Schottky Rectifier, 3.3 A Vishay High Power Products
10
1000
TJ = 25˚C
100
TJ = 150˚C
TJ = 125˚C
1
TJ = 25˚C
10
0
40
80 120 160
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
150
130
DC
110
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage Drop - V (V)
FM
Fig. 1 - Maximum Forward Voltage Drop Characteristics
90
Square wave (D = 0.50)
80% Rated Vr applied
see note (1)
70
0
1
2
3
4
5
Average Forward Current - IF(AV) (A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
100
10
TJ = 150˚C
1
125˚C
0.1
0.01
25˚C
3
D = 0.20
2.5 D = 0.25
D = 0.33
D = 0.50
2 D = 0.75
RMS Limit
1.5
DC
1
0.5
0.001
0
20
40
60
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
0
0
1
2
3
4
5
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Document Number: 93320
Revision: 06-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3

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