2N6491 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2N6491 Datasheet PDF : 3 Pages
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Product Specification
Silicon PNP Power Transistors
www.jmnic.com
2N6491
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustioning voltage IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltge
IC=5A IB=0.5A
VCEsat-2 Collector-emitter saturation voltage IC=15A IB=5A
VBE-1
Base-emitter on voltage
IC=5A ; VCE=4V
VBE-2
Base-emitter on voltage
IC=15A ; VCE=4V
ICEO
Collector cut-off current
VCE=40V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=4V
hFE-2
DC current gain
IC=15A ; VCE=4V
MIN TYP. MAX UNIT
80
V
1.3
V
3.5
V
1.3
V
3.5
V
1
mA
1
mA
20
150
5
JMnic
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