BSP75A 查看數據表（PDF） - Siemens AG

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BSP75A

Smart Lowside Power Switch

Siemens AG 

Parameter and Conditions

at Tj = 25 °C, unless otherwise specified

Preliminary data sheet HITFET® BSP 75A

Symbol

Values

Unit

min typ max

Protection Functions

Thermal overload trip temperature

Tjt

Thermal hysteresis

∆Tjt

Unclamped single pulse inductive energy

ID(ISO)=0.7 A, Vbb=32 V

Tj=25 °C EAS

Tj=150 °C

Inverse Diode

Continuous source drain voltage

VSD

VIN = 0 V, -ID = 2*0.7 A

150 165

-- 10

550

--

200

--

-- °C

-- K

-- mJ

--

--

1

-- V

Circuit Description

The BSP 75 is a monolithic power switch in Smart Power Technology (SPT) with a logic level

input, an open drain DMOS output stage and integrated protection functions. It is designed

for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial ap-

plications.

Protection functions

• Overvoltage protection: An internal clamp limits the output voltage at VDS(AZ) (about

63 V) when inductive loads are switched off.

• Current limitation: By means of an internal current measurement the drain current is lim-

ited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates in the

linear region, so power dissipation may exceed the capability of the heatsink. This opera-

tion leads to an increasing junction temperature until the overtemperature threshold is

reached.

• Overtemperature and short circuit protection: This protection is based on sensing the

chip temperature. The location of the sensor ensures a fast and accurate junction tem-

perature detection. Overtemperature shutdown occurs at minimum 150 °C. A hysteresis of

typ. 10 K enables an automatical restart by cooling.

The device is ESD protected according Human Body Model (4 kV) and load dump protected

(see Maximum Ratings).

Semiconductor Group

Page 4

1998-02-04

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