BC337-25 查看數據表（PDF） - Infineon Technologies

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BC337-25

NPN Silicon AF Transistors

Infineon Technologies 

DC current gain hFE = f (IC)

VCE = 1 V

BC 337

BC 338

Transition frequency fT = f (IC)

f = 20 MHz, TA = 25 ˚C

Collector-emitter saturation voltage

VCEsat = f (IC)

hFE = 10

Base-emitter saturation voltage

VBEsat = f (IC)

hFE = 10

Semiconductor Group

6

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