Q62702-C825 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

Q62702-C825

NPN Silicon Darlington Transistor

Infineon Technologies 

BC 517

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 10 mA

Collector-base breakdown voltage

IC = 100 µA

Emitter-base breakdown voltage

IE = 10 µA

Collector cutoff current

VCB = 30 V

VCB = 30 V, TA = 150 ˚C

Emitter cutoff current

VEB = 4 V

DC current gain

IC = 20 mA; VCE = 2 V1)

Collector-emitter saturation voltage1)

IC = 100 mA; IB = 0.1 mA

Base-emitter voltage1)

IC = 10 mA; VCE = 5 V

AC characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

Output capacitance

VCB = 10 V, f = 1 MHz

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 30

–

V(BR)CB0 40

–

V(BR)EB0 10

–

ICB0

–

–

–

–

IEB0

–

–

hFE

30 000 –

VCEsat

–

–

VBE

–

–

–

V

–

–

100 nA

10

µA

100 nA

–

–

1

V

1.4

fT

–

Cobo

–

150 –

3.5 –

MHz

pF

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

2

Share Link: