BCW67 查看數據表（PDF） - Diotec Semiconductor Germany

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BCW67

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

General Purpose Transistors

Characteristics (Tj = 25/C)

Collector saturation volt. – Kollektor-Sättigungsspg. 1)

- IC = 100 mA, - IB = 10 mA

- VCEsat

- IC = 500 mA, - IB = 50 mA

- VCEsat

Base saturation voltage – Basis-Sättigungsspannung 1)

- IC = 100 mA, - IB = 10 mA

- VBEsat

- IC = 500 mA, - IB = 50 mA

- VBEsat

DC current gain – Kollektor-Basis-Stromverhältnis 1)

- VCE = 10 V

- IC = 100 : mA

BCW 67A / 68F hFE

BCW 67B / 68G hFE

BCW 67C / 68H hFE

- VCE = 1 V

- IC = 10 mA

BCW 67A / 68F hFE

BCW 67B / 68G hFE

BCW 67C / 68H hFE

- VCE = 1 V

- IC = 100 mA

BCW 67A / 68F hFE

BCW 67B / 68G hFE

BCW 67C / 68H hFE

- VCE = 2 V

- IC = 500 mA

BCW 67A / 68F hFE

BCW 67B / 68G hFE

BCW 67C / 68H hFE

Gain-Bandwidth Product – Transitfrequenz

- VCE = 5 V, - IC = 50 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE = ie = 0, f = 1 MHz

CCB0

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEB0

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary NPN-transistors

Empfohlene komplementäre NPN-Transistoren

BCW 67, BCW 68

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

–

–

300 mV

–

–

700 mV

–

–

1.25 V

–

–

2V

35

–

–

50

–

–

80

–

–

75

–

–

120

–

–

180

–

–

100

160

250

160

250

400

250

350

630

35

–

–

60

–

–

100

–

–

–

200 MHz

–

–

6 pF

–

–

60 pF

–

RthA

420 K/W 2)

BCW 65, BCW 66

Marking – Stempelung

BCW 67A = DA BCW 67B = DB BCW 67C = DC

BCW 68F = DF BCW 68G = DG BCW 68H = DH

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

45

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